- Compliant with NVMe 1.3 Standard
- Ultra Thin M.2 Form Factor
- Sequential Read/Write Speed up to 3000/2000MB/s
- Random Write Performance Up to 360,000 IOPs
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Product NameAS2280P4
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Capacity256GB/512GB/1TB
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InterfacePCIe Gen3 x4
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NAND Flash3D TLC
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Sequential Read PerformanceUp to 3,000MB/s
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Sequential Write Performance
Up to 2,000MB/s
*The performance may vary due to host hardware, software , usage and storage capacity.
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IOPs (4K Random Write)Up to 360,000 IOPS
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ECC SupportUp to 72bit/1KB
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Shock1,500G/0.5msec
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Vibration7~800Hz, 3.08Grms
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Low Power Consumption (Active/Idle)275/80mA
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MTBF1,500,000 hours
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Humidity5% ~95%
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Standard Operating Temperature0°C ~ +70°C
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Storage Temperature-40 ~ +85°C
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Dimensions(L)80 x (W)22 x (H)2.25mm
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CertificateCE, FCC, VCCI, BSMI, RoHS